The concept of an optical module combining the board for an optical system for two-way communication in the range of 850 nm is proposed. The board contains optical transceivers, the content of the PD grating and semiconductor lasers with vertical resonators. In addition, on the board, there are devices for deflecting optical rays of a holographic type using polymer optical waveguides in which the total internal reflection of the propagating radiation occurs. Noise characteristics and factors affecting the orientation of the rays are considered. Device m b. used as part of communication systems with a data transfer rate of 2.5 Gbps.
Parallel processors for processing optical signals using optoelectronic VLSI.
cfot salary
The problem of using semiconductor VLSI in optical information processing devices, in particular in optical computers, is considered. It is shown that in order to overcome the difficulties caused by the limited bandwidth and low speed, it is recommended to use parallel VLSI arrays connected with each other using three-dimensional optical interconnects. Interconnects are created on the basis of two-dimensional structures. As an example of an optical signal processing device, a binary memory of a neural type is mentioned. It is shown that when creating associative memory devices based on optoelectronic devices, memory parameters m are increased several dozen times. Shows examples of optoelectronic VLSI.
Parallel processors for processing optical signals using optoelectronic VLSI.
cfot salary
The problem of using semiconductor VLSI in optical information processing devices, in particular in optical computers, is considered. It is shown that in order to overcome the difficulties caused by the limited bandwidth and low speed, it is recommended to use parallel VLSI arrays connected with each other using three-dimensional optical interconnects. Interconnects are created on the basis of two-dimensional structures. As an example of an optical signal processing device, a binary memory of a neural type is mentioned. It is shown that when creating associative memory devices based on optoelectronic devices, memory parameters m are increased several dozen times. Shows examples of optoelectronic VLSI.
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